What is charge density in pn junction?
As a result, the charge density of the P-type along the junction is filled with negatively charged acceptor ions ( NA ), and the charge density of the N-type along the junction becomes positive. This charge transfer of electrons and holes across the PN junction is known as diffusion.
What is vD in pn junction diode?
= reverse saturation current (A) vD = voltage applied to diode (V) q = electronic charge (1.60 x 10-19 C) k = Boltzmann’s constant (1.38 x 10-23 J/K) T = absolute temperature (Kelvins) n = non-ideality factor (dimensionless) VT = kT/q = thermal voltage (V) (25 mV at room temp.)
What is DP in semiconductor?
Diffusion current Density is a current in a semiconductor caused by the diffusion of charge carriers (holes and/or electrons).
What is NB in semiconductor?
quasi-neutral base region, NB is the net dopant concentration in the base, and WB is the width of the quasi- neutral base region.
What is charge density formula?
Suppose q is the charge and a is the area of the surface over which it flows, then the formula of surface charge density is σ = q/A, and the S.I. unit of surface charge density is coulombs per square meter (cm−2).
What is lambda in electric field?
The symbol Lambda in an electric field represents the linear charge density. Its unit is Coulombs per meter.
What is XN and XP in pn junction?
Figure 1: A pn junction of two different materials in the open circuit case. The thicknesses of the depletion region are not the same with xn denoting the thickness of the n region, and xp denoting the thickness of the p region (Courtesy of Sedra and Smith).
What is VT in diode?
Every diode has a. characteristic “threshold voltage” – VT. An ideal diode has an infinite resistance. when the voltage across it, VD, is less than VT and zero resistance when the VD is. greater than VT.
What is VT in semiconductor?
Thermal voltage (VT) of a semiconductor p-n junction. Threshold voltage (Vt) of a MOSFET.
What is drift current density?
The current caused by the movement of charge carriers either by free electrons or holes per square unit area is referred to as the density of the drift current or Drift current Density. The density is variable based on its type of charge carriers.
What is the value of Ni for silicon at room temperature?
A silicon sample at room temperature has an intrinsic carrier concentration of ni = 5×109 cm-3.
What is the width of the depleted region w/t 300k?
Consider an abrupt p-n junction act (T = 300 K) shown in the figure. The depletion region width Xn on the n-side of the junction is 0.2 μm and the permittivity of silicon (tsi) is 1.044 × 10-12 F/cm.